Manufacturer Part NumberSCTWA50N120
Manufacturer / BrandSTMicroelectronics
Available Quantity69040 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 1200V 65A HIP247
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download SCTWA50N120.pdf

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Part Number
SCTWA50N120
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
69 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
122nC @ 20V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 400V
FET Feature
-
Power Dissipation (Max)
318W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Weight
Contact us
Application
Email for details
Replacement Part
SCTWA50N120

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